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| BAS40V schottk y diode features z low forward voltage drop z fast switching marking: kan maximum ratings @t a =25 parameter symbol limits unit non-repetitive peak reverse voltage dc blocking voltage v rm v r 40 v average rectified output current i o 200 ma power dissipation pd 150 mw thermal resistance. junction to ambient air r ja 833 /w junction temperature t j -55-125 storage temperature range t stg -65-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 10 a 40 v reverse voltage leakage current i r v r =30v 200 na forward voltage v f i f =1ma i f =40ma 380 1000 mv total capacitance c t v r =0,f=1mhz 5 pf reverse recovery time t r r i f =10ma, i r =i f =1ma r l =100 ? 5 ns 1 sot-563 www.htsemi.com semiconductor jinyu 1 date:2011/ 05
typical characteristics www.htsemi.com semiconductor jinyu 2 date:2011/ 05 BAS40V |
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